1/10 target specification november 2004 this is preliminary information on a new product foreseen to be developed. details are subject to change without notice . STP75N15 stw75n15 - stb75n15 n-channel 150v - 0.02 ? - 75a to-220/d2pak/to-247 low gate charge stripfet? mosfet table 1: general features typical r ds (on) = 20 m ? gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility excellent figure of merit (r ds *q g ) 100% avalanche tested description this mosfet series realized with stmicroelec- tronics unique stripfet process has specifically been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high-efficiency isolated dc-dc converters. applications high current, high speed switching ups table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw STP75N15 stb75n15t4 stw75n15 150 v 150 v 150 v < 0.023 ? < 0.023 ? < 0.023 ? 75 a 75 a 75 a 300 w 300 w 350 w 1 2 3 1 2 3 to-220 to-247 1 3 d2pak sales type marking package packaging STP75N15 p75n15 to-220 tube stb75n15t4 b75n15 d 2 pak tape & reel stw75n15 w75n15 to-247 tube rev. 1 free datasheet http:///
STP75N15 - stb75n15 - stw75n15 2/10 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 75a, di/dt 100a/s, v dd v (br)dss , t j t jmax. table 4: thermal data table 5: avalanche characteristics symbol parameter value unit to-220/d2pak to-247 v ds drain-source voltage (v gs = 0) 150 v v dgr drain-gate voltage (r gs = 20 k ? )150v v gs gate- source voltage 26 v i d drain current (continuous) at t c = 25 c75a i d drain current (continuous) at t c = 100 c48a i dm ( ) drain current (pulsed) 300 a p tot total dissipation at t c = 25 c 300 350 w derating factor 2 2.38 w/ c dv/dt (1) peak diode recovery voltage slope tbd v/ns t j t stg operating junction temperature storage temperature -55 to 150 c to-220/d2pak to-247 unit rthj-case thermal resistance junction-case max 0.5 0.42 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) tbd a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) tbd mj free datasheet http:///
3/10 STP75N15 - stb75n15 - stw75n15 electrical characteristics (t case =25 c unless otherwise specified) table 6: on/off table 7: dynamic table 8: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 150 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 26v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10v, i d = 37.5 a 0.023 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 75 v , i d =37.5 a tbd s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 4500 tbd tbd pf pf pf t d(on) t r t d(off) t r turn-on delay time rise time turn-off delay time fall time v dd = 75v, i d = 37.5 a, r g = 4.7 ? v gs = 10 v ( see figure 4) tbd tbd tbd tbd ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 126v, i d = 75 a, v gs = 10v (figure 7) 11 0 tbd tbd tbd nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 75 300 a a v sd (1) forward on voltage i sd = 75 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 37.5 a, di/dt = 100a/s v dd = 75 v, t j = 25 c (see test circuit, figure 5) tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 37.5 a, di/dt = 100a/s v dd = 75 v, t j = 150 c (see test circuit, figure 5) tbd tbd tbd ns c a free datasheet http:///
STP75N15 - stb75n15 - stw75n15 4/10 figure 3: unclamped inductive load test cir- cuit figure 4: switching times test circuit for re- sistive load figure 5: test circuit for inductive load switching and diode recovery times figure 6: unclamped inductive wafeform figure 7: gate charge test circuit free datasheet http:///
5/10 STP75N15 - stb75n15 - stw75n15 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data free datasheet http:///
STP75N15 - stb75n15 - stw75n15 6/10 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ? p 3.55 3.65 0.140 0.143 ? r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data free datasheet http:///
7/10 STP75N15 - stb75n15 - stw75n15 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3 free datasheet http:///
STP75N15 - stb75n15 - stw75n15 8/10 tape and reel shipment (suffix ? t4 ? )* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data free datasheet http:///
9/10 STP75N15 - stb75n15 - stw75n15 table 9: revision history date revision description of changes 08-nov-2004 1 first release. free datasheet http:///
STP75N15 - stb75n15 - stw75n15 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america free datasheet http:///
|
